| PART |
Description |
Maker |
| 2SJ358 2SJ358-T1 2SJ358-T2 2SJ358-AZ TC-2491 |
From old datasheet system
P-channel MOS FET (-60V, -3A)
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH
3 A, 60 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
| MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS 7 E-FET™ High Energy Power FET
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| 2SK435 2SK435E |
Silicon N Channel MOS FET
Silicon N-Channel Junction FET
TRANSISTOR | JFET | N-CHANNEL | 22V V(BR)DSS | 40MA I(DSS) | TO-92
|
Hitachi Semiconductor
|
| PHD22NQ20T-01 PHD22NQ20T |
N-channel TrenchMOS standard level FET
N-channel TrenchMOS standard level FET 21.1 A, 200 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
N-channel TrenchMOS?? standard level FET
N-channel Trenchmos (tm) standard level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| MTB2N40E MTB2N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 400 VOLTS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
| SSW1N50B SSI1N50B SSW1N50BTM SSI1N50BTU |
500V N-Channel B-FET / Substitute of SSI1N50A
500V N-Channel B-FET / Substitute of SSW1N50A
520V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| SSW1N60B SSI1N60B SSI1N60BTU SSW1N60BTM |
600V N-Channel B-FET / Substitute of SSW1N60A
500V N-Channel B-FET / Substitute of SSI1N60A
600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SJ178 2SJ178-T 2SJ178-T/JD 2SJ178-T/JM |
P-channel power MOS FET
P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
| MTH8N50E |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
|
| NE3210S01 NE3210S01-T1 NE3210S01-T1B |
Low Noise Amplifier N-Channel HJ-FET(低噪声N沟道结型场效应管) 低噪声放大器N沟道黄建忠场效应管（低噪沟道结型场效应管
X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
